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AO5404E N-Channel MOSFET

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Description

AO5404E N-Channel Enhancement Mode Field Effect Transistor General .
The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Features

* VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.8V) ESD PROTECTED! SC89-3L D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 20 Gat

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