AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO5803E
Manufacturer: Alpha & Omega Semiconductors
File Size: 107.84 KB
Datasheet: AO5803E-AlphaOmegaSemiconductors.pdf
Description: Dual P-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) ESD PROTECTED S1 G1 D2 SC-89-6 D1 G1 G2 D1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Vol

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