AO5803E Datasheet (Alpha & Omega Semiconductors) - Dual P-Channel Enhancement Mode Field Effect Transistor

AO5803E, Dual P-Channel Enhancement Mode Field Effect Transistor

The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint.

It can be used as load switching, and wide variety of FET applications.

AO5803E and AO5803EL are electrically identical.

-RoHS

AO5803E Features

* VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) ESD PROTECTED S1 G1 D2 SC-89-6 D1 G1 G2 D1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Vol