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AO6407 P-Channel MOSFET

AO6407 Description

January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General .
The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

AO6407 Features

* VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dra

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