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AO6401A P-Channel MOSFET

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Description

AO6401A P-Channel Enhancement Mode Field Effect Transistor General .
The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.

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Features

* VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Sourc

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