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AO6419 P-Channel MOSFET

AO6419 Description

AO6419 P-Channel Enhancement Mode Field Effect Transistor General .
The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

AO6419 Features

* VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View www. DataSheet4U. com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Ga

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