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AO6706 - N-Channel MOSFET

AO6706 Description

AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

AO6706 Features

* VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65m Ω (VGS = 10V) RDS(ON) < 75m Ω (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF

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N-Channel MOSFET Alpha & Omega Semiconductors
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