AOT424 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOT424
Manufacturer	Alpha & Omega Semiconductors
File Size	287.98 KB
Description	N-Channel MOSFET
Datasheet	AOT424_AlphaOmegaSemiconductors.pdf

The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) DataShee G DataSheet4U. com S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A M.

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Published: Sep 20, 2006 |