AOTF470 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOTF470
Manufacturer	Alpha & Omega Semiconductors
File Size	69.56 KB
Description	N-Channel MOSFET
Datasheet	AOTF470-AlphaOmegaSemiconductors.pdf

The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5mΩ (VGS = 10V) D G DS AOTF470 TO-220F G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter M.

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Published: Oct 24, 2015 |