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AOTF42S60L N-Channel MOSFET

AOTF42S60L Description

isc N-Channel MOSFET Transistor AOTF42S60L *.

AOTF42S60L Features

* Drain Current
* ID= 39A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable f

AOTF42S60L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 39 A IDM Drain Current-Single Pulsed 166 A PD Total Dissipation @TC=25℃ 37.9 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOTF42S60L
Manufacturer
INCHANGE
File Size
232.60 KB
Datasheet
AOTF42S60L-INCHANGE.pdf
Description
N-Channel MOSFET

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