Datasheet Details
| Part number | AOTL66810Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 413.50 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOTL66810Q Download (PDF) |
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Overview: General.
| Part number | AOTL66810Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 413.50 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOTL66810Q Download (PDF) |
|
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• AlphaSGTTM N-Channel Power MOSFET • Excellent gate charge x RDS(ON) product (FOM) • PB-free lead plating, RoHS compliant AOTL66810Q 80V N-Channel AlphaSGT2 TM AEC-Q101 Qualified Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 80V 445A < 1.25mΩ < 1.45mΩ Applications • BLDC Motor Drive • Battery Management • Load Switch 100% UIS Tested 100% Rg Tested Max Tj=175°C TOLLA Top View Bottom View D D PIN1 Orderable Part Number AOTL66810Q S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C (≤100μS) Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 445 315 1780 63 52 80 960 500 250 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 35 Maximum Junction-to-Case Steady-State RqJC 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.0: September 2023 www.aosmd.com Page 1 of 7 AOTL66810Q Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=100A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=75A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAM
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