Datasheet Details
| Part number | AOTL66401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 358.94 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOTL66401-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66401 40V N-Channel AlphaSGT TM General.
| Part number | AOTL66401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 358.94 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOTL66401-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 400A < 0.7mΩ < 0.95mΩ Applications • Motor Driver • Battery Protection • Power Distribution 100% UIS Tested 100% Rg Tested TOLLA Top View Bottom View D D PIN1 Orderable Part Number AOTL66401 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 400 350 1600 82 66 100 1500 300 150 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 35 Maximum Junction-to-Case Steady-State RqJC 0.3 Max 15 45 0.5 Units °C/W °C/W °C/W Rev.1.1: August 2018 .aosmd.
Page 1 of 6 AOTL66401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input C
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