AOW10N65
Alpha & Omega Semiconductors
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10a n-channel mosfet. Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
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AOW10N60 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOW10N60
FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
AOW10N60 - 10A N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOW10N60/AOWF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N60 & AOWF10N60 have been fabricated using an advanced hi.
AOW10N65 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOW10N65
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-R.
AOW10T60 - 10A N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOW10T60/AOWF10T60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10T60 & AOWF10T60 are fabricated using an advanced high vol.
AOW11N60 - 11A N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOW11N60
600V,11A N-Channel MOSFET
General Description
The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designe.
AOW11N60 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOW11N60
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-R.
AOW11S60 - Power Transistor
(Alpha & Omega Semiconductors)
AOW11S60/AOWF11S60
600V 11A α MOS TM Power Transistor
General Description
The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig.
AOW11S60 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOW11S60
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-R.
AOW11S65 - Power Transistor
(Alpha & Omega Semiconductors)
AOW11S65/AOWF11S65
650V 11A α MOS TM Power Transistor
General Description
The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM hig.
AOW11S65 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOW11S65
FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Res.