AO4406 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Alpha Industries

Description

March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General .
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: AO4406
Manufacturer: Alpha Industries
File Size: 290.44 KB
Datasheet: AO4406_AlphaIndustries.pdf
Description: N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain

AO4406 Distributors

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AO4406 CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Alpha Industries

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