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AO4406 - N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

AO4406 Description

March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General .
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

AO4406 Features

* VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain

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Datasheet Details

Part number
AO4406
Manufacturer
Alpha Industries
File Size
290.44 KB
Datasheet
AO4406_AlphaIndustries.pdf
Description
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Alpha Industries
Alpha Industries AO4406-like datasheet

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