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BLF578XRS, BLF578XR Power LDMOS transistor

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Description

BLF578XR; BLF578XRS Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

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This datasheet PDF includes multiple part numbers: BLF578XRS, BLF578XR. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF578XRS, BLF578XR
Manufacturer
Ampleon
File Size
420.60 KB
Datasheet
BLF578XR-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF578XRS, BLF578XR.
Please refer to the document for exact specifications by model.

Features

* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:
* Output power = 1400 W
* Power gain = 23.5 dB
* Efficiency = 69 %
* Easy power control
* Integrated ESD protection
* Excellent ruggedness

Applications

* in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V)

BLF578XRS Distributors

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