Description
BLF578XR; BLF578XRS Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Features
* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %:
* Output power = 1400 W
* Power gain = 23.5 dB
* Efficiency = 69 %
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
Applications
* in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal
pulsed RF
f (MHz) 225
VDS
PL
(V)