Description
BLF574XR; BLF574XRS Power LDMOS transistor Rev.1 * 20 June 2013 Product data sheet 1.Product profile 1.1 General .
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Features
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (HF to 500 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applic
Applications
* in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information
Test signal
f
(MHz)
CW 225
pulsed RF
225
VDS
