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BLF574XRS, BLF574XR Power LDMOS transistor

BLF574XRS Description

BLF574XR; BLF574XRS Power LDMOS transistor Rev.1 * 20 June 2013 Product data sheet 1.Product profile 1.1 General .
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

BLF574XRS Features

* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (HF to 500 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applic

BLF574XRS Applications

* in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal f (MHz) CW 225 pulsed RF 225 VDS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLF574XRS, BLF574XR. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF574XRS, BLF574XR
Manufacturer
NXP ↗
File Size
148.88 KB
Datasheet
BLF574XR-NXP.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF574XRS, BLF574XR.
Please refer to the document for exact specifications by model.

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Power LDMOS transistor NXP
NXP BLF574XRS-like datasheet