AF2302N
Features
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
Product Summary
VDS = 20V RDS (on), VGS@4.5V, IDS@3.6A =65mΩ. RDS (on), VGS@2.5V, IDS@3.1A =95mΩ.
Pin Assignments
3 (Top View) 1. G 2. S 3. D
Pin Descriptions
Pin No. 1 2 3 Pin Name G S D Description
Gate Source Drain
Ordering information
A X Feature
F :MOSFET PN 2302N X X X Package W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel
Block Diagram
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent acpany the sale of the product.
Rev. 1.1 Jul 20, 2004 1/4
20V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise...
