ADG636 - 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Analog Devices

The ADG636 by Analog Devices is a 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch. Below is the official datasheet preview.

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ADG636 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch by Analog Devices - Datasheet Preview — Official preview page of the **ADG636** 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch datasheet (Analog Devices).

Datasheet Details

Part number	ADG636
Manufacturer	Analog Devices
File Size	147.68 KB
Description	1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
Datasheet	ADG636_AnalogDevices.pdf
Additional preview pages of the ADG636 datasheet.

ADG636 Product details

Description

PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches.When on, each switch conducts equally well in both directions.The ADG636 operates from a dual ± 2.7 V to ± 5.5 V supply, or from a single supply of +2.7 V to +5.5 V.This switch offers ultralow charge injection of ± 1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C.It offers on-resistance of 85 Ω typ, which is matched to

Features

1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range:.
40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (.

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Other Datasheets by Analog Devices

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Published: Mar 24, 2005 |