ADG636 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Analog Devices

Description

a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 .
PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches.

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Datasheet Specifications

Part number: ADG636
Manufacturer: Analog Devices ↗
File Size: 147.68 KB
Datasheet: ADG636_AnalogDevices.pdf
Description: 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Features

* 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range:
* 40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (

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ADG636 Charge Injection 100 Leakage CMOS Dual SPDT Switch Analog Devices

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