* P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +40 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network General Description The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT)
HMC740ST89E Datasheet (659.04 KB)
HMC740ST89E
659.04 KB
Ingap hbt active bias mmic.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
v02.0813
Typical Applications
8
The HMC740ST89E is ideal for:
* Cellular/3G & WiMAX/4G
* F.
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