HMC8411LP2FE

Low-Noise Amplifier

Analog Devices

HMC8411LP2FE Features

* Low noise figure: 1.7 dB typical

* Single positive supply (self biased)

* High gain: 15.5 dB typical

* High OIP3: 34 dBm typical

* 6-lead, 2 mm × 2 mm LFCSP APPLICATIONS

* Test instrumentation

* Military communications GENERAL DESCRIPTION The HMC8411LP2FE is a gallium a

HMC8411LP2FE General Description

The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figu.

HMC8411LP2FE Datasheet (1.50 MB)