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HMC8411LP2FE - Low-Noise Amplifier

HMC8411LP2FE Description

Data Sheet HMC8411LP2FE Low Noise Amplifier, 0.01 GHz to 10 GHz .
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT).

HMC8411LP2FE Features

* Low noise figure: 1.7 dB typical
* Single positive supply (self biased)
* High gain: 15.5 dB typical
* High OIP3: 34 dBm typical

HMC8411LP2FE Applications

* Test instrumentation

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Low-Noise Amplifier Analog Devices
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