Part number:
AM230N07-03B
Manufacturer:
Analog Power
File Size:
296.98 KB
Description:
N-channel mosfet.
AM230N07-03B Datasheet (296.98 KB)
* Low rDS(on) trench technology
* Low thermal impedance
* Fast switching speed Typical Applications:
* White LED boost converters
* Automotive Systems
* Industrial DC/DC Conversion Circuits AM230N07-03B VDS (V) 75 PRODUCT SUMMARY rDS(on) (mΩ) 4.5 @
AM230N07-03B Datasheet (296.98 KB)
AM230N07-03B
Analog Power
296.98 KB
N-channel mosfet.
📁 Related Datasheet
AM2300 - N-Channel Enhancement Mode MOSFET
(AXElite)
AM2300
N-Channel Enhancement Mode MOSFET
Features
•
20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=115mΩ(typ.) @ VGS=2.5.
AM2300 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
AM2300
MOSFET 20V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2300 is the N-Channel logic enhanc.
AM2300N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat.
AM2301 - Digital temperature and humidity sensor
(Aosong)
DHT21
：DHT21 AM2301
DHT21 /AM2301 DHT21/AM2301
► ►， ► ► ► ► ►4 ► DHT21 DHT21 。， 。NTC ，8。、 、、。DHT21 。OTP， 。， 。、，20， 。 4 。，。 ► ► ► ► ► ►
► ► ►.
AM2301 - P-Channel Enhancement Mode MOSFET
(AXElite)
AM2301
P-Channel Enhancement Mode MOSFET
Features
z
Pin Description
Top View
D
-20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) .
AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
AM2301
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM2301 is the P-Channel logic enhancement mode.
AM2301P - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM2301PE - P-Channel 20-V (D-S) MOSFET
(Analog Power)
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
