AM2334N
Analog Power
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N-channel mosfet.
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
📁 Related Datasheet
AM2334NE - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM2330N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
AM2330NE - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) a.
AM2332N - N-Channel MOSFET
(Analog Power)
Analog Power
AM2332N
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS.
AM2336N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM2336N-T1-PF - N-Channel MOSFET
(VBsemi)
AM2336N-T1-PF
AM2336N-T1-PF Datasheet
.VBsemi.
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.0.
AM2337P - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM2337P-T1-PF - P-Channel MOSFET
(VBsemi)
AM2337P-T1-PF-VB
AM2337P-T1-PF-VB Datasheet
P-Channel 20-V (D-S) MOSFET
.VBsemi.
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.060 .
