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Analog Power
AM30N20-400PCFM
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
PRODUCT SUMMARY rDS(on) (mΩ) 400 @ VGS = 10V 450 @ VGS = 5.5V
VDS (V) 200
ID(A) 9 8.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 9 a I 50 Pulsed Drain Current DM IS Continuous Source Current (Diode Conduction) 50 T =25°C P Power Dissipation 60 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range
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AM30N20-400PCFM Datasheet
