Datasheet Summary
Analog Power
N-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, and munication equipments.
- Low rDS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe TO-220 saves board space
- Fast switching speed
- High performance trench technology
PRODUCT SUMMARY
VDS (V) rDS(on) m(Ω)
200 400 @ VGS = 10V 450 @ VGS = 5.5V
ID (A) 23a
D1
G1
S1 N-Channel MOSFET
ABSOLUTE...