AM90N06-04M2B
AM90N06-04M2B is N-Channel MOSFET manufactured by Analog Power.
Features
:
- Low r DS(on) trench technology
- Low thermal impedance
- Fast switching speed
Typical Applications:
- Automotive Systems
- DC/DC Conversion Circuits
- Battery Powered Power Tools
VDS (V) 60
PRODUCT SUMMARY r DS(on) (mΩ)
4.6 @ VGS = 10V 5.9 @ VGS = 4.5V
ID (A) 90a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 90 360 90 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient c Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 0.5
Units °C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number: DS_AM90N06-04m2B_1A
Analog Power
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body...
