AS4SD16M16 Datasheet (Austin Semiconductor) - 16 Meg x 16 SDRAM Synchronous DRAM Memory

AS4SD16M16, 16 Meg x 16 SDRAM Synchronous DRAM Memory

The 256MB SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.

It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Each of the 67,108,864-bit banks is organized as 8,

AS4SD16M16 Features

* Full Military temp (-55°C to 125°C) processing available

* Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks)

* Fully synchronous; all signals registered on positive edge of system clock

* Internal pipelined operation; column address can be changed every clock cycle