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B2D20120H1

SiC Schottky Diode

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor BASiC Semiconductor B2D20120H1 Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA TME 44 600 units
$3.4

B2D20120H1 Datasheet (569.20 KB)

Preview of B2D20120H1 PDF Datasheet

Datasheet Details

Part number:

B2D20120H1

Manufacturer:

BASiC Semiconductor

File Size:

569.20 KB

Description:

Sic schottky diode

B2D20120H1 Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on VF

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficiency impr

B2D20120H1 General Description

of Changes Release of the datasheet. BASiC Semiconductor Ltd. Shenzhen, China © 2022 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The inform.

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B2D20120H1 SiC Schottky Diode BASiC Semiconductor

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