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B2D20120H1 Datasheet - BASiC Semiconductor

B2D20120H1 - SiC Schottky Diode

of Changes Release of the datasheet.

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B2D20120H1 Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on VF

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficiency impr

B2D20120H1-BASiCSemiconductor.pdf

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Datasheet Details

Part number:

B2D20120H1

Manufacturer:

BASiC Semiconductor

File Size:

569.20 KB

Description:

Sic schottky diode.

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