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B2D20120H1 - SiC Schottky Diode

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Datasheet Details

Part number	B2D20120H1
Manufacturer	BASiC Semiconductor
File Size	569.20 KB
Description	SiC Schottky Diode
Datasheet	B2D20120H1-BASiCSemiconductor.pdf

B2D20120H1 Product details

Description

of Changes Release of the datasheet.

Features

Extremely low reverse current.
No reverse recovery current.
Temperature independent switching.
Positive temperature coefficient on VF.
Excellent surge current capability.
Low capacitive charge Benefits.
Essentially no switching losses.
System efficiency improvement over Si diodes.
Increased power density.
Enabling higher switching frequency.
Reduction of heat sink requirements.
System cost savings due to smaller magnetics.
Reduce.

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Published: Jan 31, 2025 |