B2D20120HC1 - SiC Schottky Diode
of Changes Release of the datasheet.
Preliminary datasheet.
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B2D20120HC1 Features
* Extremely low reverse current
* No reverse recovery current
* Temperature independent switching
* Positive temperature coefficient on VF
* Excellent surge current capability
* Low capacitive charge Benefits
* Essentially no switching losses
* System efficiency impro