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B2D40065H1 - SiC Schottky Diode

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Datasheet Details

Part number	B2D40065H1
Manufacturer	BASiC Semiconductor
File Size	300.94 KB
Description	SiC Schottky Diode
Datasheet	B2D40065H1-BASiCSemiconductor.pdf

B2D40065H1 Product details

Description

of Changes Release of the datasheet.

Features

Low leakage current (IR).
Zero reverse recovery current.
Temperature independent switching behavior.
Positive temperature coefficient on VF.
High surge current capacity.
Low capacitive charge Benefits.
System cost savings due to smaller magnetics.
System efficiency improvement over Si diodes.
Reduction of heat sink requirements.
Enabling higher frequency.
Reduced EMI.

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Published: Nov 3, 2024 |