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BLM9435

P-Channel Enhancement Mode Power MOSFET

BLM9435 Features

* VDS VGS -30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID -5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power

BLM9435 General Description

This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss.

BLM9435 Datasheet (140.49 KB)

Preview of BLM9435 PDF

Datasheet Details

Part number:

BLM9435

Manufacturer:

BELLING

File Size:

140.49 KB

Description:

P-channel enhancement mode power mosfet.

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BLM9435 P-Channel Enhancement Mode Power MOSFET BELLING

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