BLM2004NE N-Channel Enhancement Mode Power MOSFET

BELLING

Description

Pb Free Product BLM2004NE N-Channel Enhancement Mode Power MOSFET .
The BLM2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

📥 Download Datasheet

BLM2004NE Datasheet Preview — Preview of BLM2004NE PDF

Datasheet Specifications

Part number: BLM2004NE
Manufacturer: BELLING
File Size: 291.27 KB
Datasheet: BLM2004NE-BELLING.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =6A Typ. RDS(ON) = 17mΩ @ VGS=4.5V Typ. RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

BLM2004NE Distributors

📁 Related Datasheet

BLM211 BLM21AG102SN1B BLM21AG102SN1D BLM21AG102SN1J BLM21AG121SN1 BLM21AG121SN1B

📌 All Tags

BLM2004NE N-Channel Enhancement Mode Power MOSFET BELLING

BELLING BLM2004NE-like datasheet