BLM2010E N-Channel Enhancement Mode Power MOSFET

BELLING

Description

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET .
The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: BLM2010E
Manufacturer: BELLING
File Size: 301.62 KB
Datasheet: BLM2010E-BELLING.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

BLM2010E Distributors

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N-Channel Enhancement Mode Power MOSFET BELLING

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