Datasheet Details
- Part number
- BLM2010E
- Manufacturer
- BELLING
- File Size
- 301.62 KB
- Datasheet
- BLM2010E-BELLING.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
BLM2010E Description
ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET .
The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
BLM2010E Features
* VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
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