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BLM2008E Datasheet - BELLING

BLM2008E N-Channel Enhancement Mode Power MOSFET

BLM2008E Features

* VDS = 20V,ID =6A Typ.RDS(ON) = 17m Ω @ VGS=4.5V Typ.RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package Schematic diagram Marking and pin Assignment Application

* PWM application

BLM2008E-BELLING.pdf

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Datasheet Details

Part number:

BLM2008E

Manufacturer:

BELLING

File Size:

246.99 KB

Description:

N-channel enhancement mode power mosfet.

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BLM2008E BLM2008E N-Channel Enhancement Mode Power MOSFET BELLING

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