BLM2006NE N-Channel Enhancement Mode Power MOSFET

BELLING

Description

N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE .
The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: BLM2006NE
Manufacturer: BELLING
File Size: 285.55 KB
Datasheet: BLM2006NE-BELLING.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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BLM2006NE N-Channel Enhancement Mode Power MOSFET BELLING

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