P042N10G Datasheet (BELLING)

P042N10G, MOSFET

BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for Synchronous rectification and high speed switching applications.

KEY CHA

P042N10G Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* Synchronous rectification

* High speed switching applications ORDERING INFORMATION Ordering Codes Product Code BLP042N