P0425AI Datasheet - UNIKC

P0425AI N-Channel MOSFET

P0425AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.8Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 4 3 16 Avalanche Current IAS 4 Avalanche Energy L = 7.7mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature .

P0425AI Datasheet (278.63 KB)