12N035 N-Channel Field Effect Transistor

Description

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 12N035 .
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited f.

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Datasheet Specifications

Part number: 12N035
Manufacturer: BL
File Size: 65.67 KB
Datasheet: 12N035_BL.pdf
Description: N-Channel Field Effect Transistor

Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 Ω ID = 12A Orderin

Applications

* such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. www. DataSheet4U. com The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approxim

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N-Channel Field Effect Transistor BL

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