12N035 - N-Channel Field Effect Transistor

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Datasheet Details

Part number	12N035
Manufacturer	BL
File Size	65.67 KB
Description	N-Channel Field Effect Transistor
Datasheet	12N035_BL.pdf

12N035 Product details

Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

Features

Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 Ω ID = 12A Ordering Information Device 12N035T 12N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current -Continues -Pulsed Drain-Source Voltage Gate.

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Published: May 23, 2008 |