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12N035 Datasheet - BL

12N035 N-Channel Field Effect Transistor

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans.

12N035 Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 Ω ID = 12A Orderin

12N035 Datasheet (65.67 KB)

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Datasheet Details

Part number:

12N035

Manufacturer:

BL

File Size:

65.67 KB

Description:

N-channel field effect transistor.

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12N035 N-Channel Field Effect Transistor BL

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