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12N18 N-Channel Mosfet Transistor

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
12N18
Manufacturer
Inchange Semiconductor
File Size
261.04 KB
Datasheet
12N18-InchangeSemiconductor.pdf
Description
N-Channel Mosfet Transistor

Features

* Drain Current ID= 12A@ TC=25℃
* Drain Source Voltage- : VDSS= 180V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switch mode power supply.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 180 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 75 W

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