12N65 Datasheet, Transistor, Inchange Semiconductor

12N65 Features

• Transistor
• Drain Current
    –ID= 12A@ TC=25℃
• Drain Source Voltage- : VDSS= 650V (Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)
• Aval

PDF File Details

Part number:

12N65

Manufacturer:

Inchange Semiconductor

File Size:

130.26kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

TAGS

12N65

Inchange Semiconductor

📁 Related Datasheet

12N60 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re.

12N60 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ .. Power MOSFET DESCRIPTION The UTC 12N60 are N-Cha.

12N60 - 600V N-Channel MOSFET (GFD)
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been.

12N60-C - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have .

12N60A - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60AF - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60C - IGBT (IXYS)
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE.