12N60 Datasheet, Mosfet, Inchange Semiconductor

12N60 Features

• Mosfet
• Drain Current
    –ID= 12A@ TC=25℃
• Drain Source Voltage- : VDSS= 600V (Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
• Avala

PDF File Details

Part number:

12N60

Manufacturer:

Inchange Semiconductor

File Size:

223.05kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

12N60 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

12N60

Inchange Semiconductor

📁 Related Datasheet

12N60 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ .. Power MOSFET DESCRIPTION The UTC 12N60 are N-Cha.

12N60 - 600V N-Channel MOSFET (GFD)
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been.

12N60-C - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have .

12N60A - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60AF - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60C - IGBT (IXYS)
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE.

12N60C3D - HGTG12N60C3D (Fairchild Semiconductor)
HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo.