12N60A Datasheet, Mosfet, nELL

12N60A Features

• Mosfet RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv

PDF File Details

Part number:

12N60A

Manufacturer:

nELL

File Size:

330.98kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resis

12N60A Application

• Applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applicatio

TAGS

12N60A

nELL

📁 Related Datasheet

12N60 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re.

12N60 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ .. Power MOSFET DESCRIPTION The UTC 12N60 are N-Cha.

12N60 - 600V N-Channel MOSFET (GFD)
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been.

12N60-C - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have .

12N60AF - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si.

12N60B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava.

12N60C - IGBT (IXYS)
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE.

12N60C3D - HGTG12N60C3D (Fairchild Semiconductor)
HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo.