12N60C3D Datasheet - Fairchild Semiconductor

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12N60C3D HGTG12N60C3D

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo.

12N60C3D_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

12N60C3D

Manufacturer:

Fairchild Semiconductor

File Size:

158.02 KB

Description:

HGTG12N60C3D

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

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