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12N60C3D - HGTG12N60C3D

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Fairchild Semiconductor

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12N60C3D HGTG12N60C3D by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – 12N60C3D

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Part number	12N60C3D
Manufacturer	Fairchild Semiconductor
File Size	158.02 KB
Description	HGTG12N60C3D
Datasheet	12N60C3D Datasheet
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Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel www. DataSheet4U. com with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching.

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Published: Dec 23, 2008 |