12N60C3D Datasheet - Fairchild Semiconductor

12N60C3D HGTG12N60C3D

12N60C3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

12N60C3D Datasheet (158.02 KB)