12N60CD1 Datasheet - IXYS

12N60CD1 IGBT

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = IC25 = =VCE(sat) tfi(typ) = 600 24 2.7 55 V A V ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH PC TC = 25°C TJ T JM Tstg Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight Maximum lead temperature for solder.

12N60CD1 Features

* l Very high frequency IGBT l New generation HDMOSTM process l International standard package JEDEC TO-247AD l High peak current handling capability Symbol BVCES VGE(th)

12N60CD1-IXYS.pdf