PESD12VL2BT-N Datasheet - BORN

PESD12VL2BT-N ESD Protection Diode Array

PESD12VL2BT-N Features

* 350 Watts peak pulse power (tp =8/20μs)

* Bidirectional configurations

* Solid-state silicon-avalanche technology

* Low clamping voltage

* Low leakage current

* IEC 61000-4-2 ±30kV contact ±30kVair

* IEC 61000-4-4 (EFT) 40A(5/50ns)

* IEC 61000-4-5 (Lightning) 12A(8/

Datasheet Details

PESD12VL2BT-N

BORN

597.91 KB

Esd protection diode array.

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