PESD3V3S1BA-N Datasheet - BORN

PESD3V3S1BA-N ESD Protection Diode

PESD3V3S1BA-N Features

* 100Watts peak pulse power (tp =8/20μs)

* Bidirectional configurations

* Solid-state silicon-avalanche technology

* Low clamping voltage

* Low leakage current

* IEC 61000-4-2 ±25kV contact ±25kV air

* IEC 61000-4-4 (EFT) 40A(5/50ns)

* IEC 61000-4-5 (Lightning) 10A(8/

Datasheet Details

PESD3V3S1BA-N

BORN

702.85 KB

Esd protection diode.

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