PESD3V3S2UAT - Double ESD protection diodes in SOT23 package

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NXP

PESD3V3S2UAT Double ESD protection diodes in SOT23 package by NXP - Datasheet Preview — Datasheet preview – PESD3V3S2UAT

Datasheet Details

Part number	PESD3V3S2UAT
Manufacturer	NXP
File Size	122.38 KB
Description	Double ESD protection diodes in SOT23 package
Datasheet	PESD3V3S2UAT Datasheet
Additional preview pages of the PESD3V3S2UAT datasheet.

Product details

Description

Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. = p : made in Hong Kong. = t : made in Malaysia. = W : made in China. 7A 7B 7C 7D 7E 1 PESDxS2UAT series QUICK R

Features

Unidirectional ESD protection of up to two lines.
Common-cathode configuration.
Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs.
Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A.
Ultra-low reverse leakage current: IRM < 700 nA.
ESD protection > 30 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

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Published: Mar 22, 2005 |