AM9945N Dual N-Channel MOSFET

BYD Microelectronics

Description

BYD Microelectronics Co., Ltd.AM9945N Dual N-Channel MOSFET General .
The AM9945N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: AM9945N
Manufacturer: BYD Microelectronics
File Size: 373.59 KB
Datasheet: AM9945N-BYDMicroelectronics.pdf
Description: Dual N-Channel MOSFET

Features

* 
* VDS (V) =60V
* Low on-state resistance RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A) RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A)
* Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL LIMIT Drain to Source Voltage VDSS 60 Gate to Source Voltage VG

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AM9945N Dual N-Channel MOSFET BYD Microelectronics

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