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50N035 Datasheet - Bay Linear

N-Channel FET

50N035 Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Orderin

50N035 General Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans.

50N035 Datasheet (66.88 KB)

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Datasheet Details

Part number:

50N035

Manufacturer:

Bay Linear

File Size:

66.88 KB

Description:

N-channel fet.

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50N035 N-Channel FET Bay Linear

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