50N035 Datasheet - Bay Linear

50N035 N-Channel FET

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans.

50N035 Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Orderin

50N035_BayLinear.pdf