ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
APPLICATIO
✔ 50N02409PU54A Application
D Synchronous Buck DC/DC Conversion - Desktop - Server
D
TO-252
G Drain Connected to Tab G D S
Top View
50N03, Tuofeng
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC c.
50N03, KIA
KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-re.
50N03, GFO
DESCRIPTION
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.
