Part number: 50N02409PU54A
Manufacturer: Vishay (https://www.vishay.com/) Intertechnology
File Size: 85.07KB
Download: 📄 Datasheet
Description: SU50N02409PU54A
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
APPLICATIO.
D Synchronous Buck DC/DC Conversion - Desktop - Server
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number.
Image gallery
TAGS
📁 Related Datasheet
50N024 - SUD50N024
(Vishay Siliconix)
www..com
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 6.
50N02-09 - SUB50N02-09
(Vishay Siliconix)
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
50N025-05P - SUD50N025-05P
(Vishay Siliconix)
New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS =.
50N03 - Power Transistor
(Tuofeng)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC c.
50N03 - N-CHANNEL MOSFET
(KIA)
KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-re.
50N03 - MOSFET
(GFO)
DESCRIPTION
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.
50N035 - N-Channel FET
(Bay Linear)
www..com
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect .
50N03LT - PHP50N03LT
(NXP Semiconductors)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resi.
50N04 - N-Channel MOSFET
(VBsemi)
50N04
50N04 Datasheet
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0050 at VGS = 10 V 40
0.0065 at VGS = 4.5 V
ID (A)a, c .
50N04-07L - SUD50N04-07L
(Vishay)
New Product
SUD50N04-07L
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
40 0.0074 at VGS = 10 V 0.
