50N04 Datasheet, mosfet equivalent, VBsemi

PDF File Details

Part number: 50N04

Manufacturer: VBsemi

File Size: 330.87KB

Download: 📄 Datasheet

Description: N-Channel MOSFET

50N04 Features and benefits

50N04 Application

Image gallery

TAGS

📁 Related Datasheet

50N02-09 - SUB50N02-09 (Vishay Siliconix)
SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4..

50N024 - SUD50N024 (Vishay Siliconix)
www..com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 6.

50N02409PU54A - SU50N02409PU54A (Vishay Intertechnology)
www..com www..com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C F.

50N025-05P - SUD50N025-05P (Vishay Siliconix)
New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS =.

50N03 - Power Transistor (Tuofeng)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC c.

50N03 - N-CHANNEL MOSFET (KIA)
KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-re.

50N03 - MOSFET (GFO)
DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.

50N035 - N-Channel FET (Bay Linear)
www..com Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 Description The Bay Linear n-channel power field effect .

50N03LT - PHP50N03LT (NXP Semiconductors)
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resi.

50N04-07L - SUD50N04-07L (Vishay)
New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 40 0.0074 at VGS = 10 V 0.