B8CR1M32RH - Radiation-Hardened SRAM
(Beijing Microelectronics)
Ver 1.3
Radiation-Hardened SRAM
Datasheet
Part Number:B8CR1M32RH
Page of Revise Control
Version No. 1.0
1.1
1.2 1.3
Publish Time
09.20.2016
03.26.2.
B8CR256K32RH - Radiation-Hardened SRAM
(Beijing Microelectronics)
Ver 1.2
Radiation-Hardened SRAM
Datasheet
Part Number:B8CR256K32RH
Version No. 1.0
1.1
1.2
Publish Time
09.20.2016
03.26.2017
03.06.2018
Page of Re.
B8CR2M32RH - Radiation-Hardened SRAM
(Beijing Microelectronics)
Ver 1.3
Radiation-Hardened SRAM
Datasheet
Part Number:B8CR2M32RH
Version No. 1.0
1.1
1.2 1.3
Publish Time
09.20.2016
03.26.2017
03.06.2018 27.07.201.
B8CR512K32RH - Radiation-Hardened SRAM
(Beijing Microelectronics)
Ver 1.2
Radiation-Hardened SRAM
Datasheet
Part Number:B8CR512K32RH
Version No. 1.0 1.1 1.2
Page of Revise Control
Publish Time
1.20.2015 07.22.2015.
B80-C1000 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
B40-B380/C1000
PRV : 100 - 900 Volts Io : 1.0 Amperes
FEATURES :
* * * * * * High case dielectric strength High surge current capability High reliabil.
B80-C1500R - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
.eicsemi.
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
B40 - B380/C1500R
SILICON BRIDGE RECTIFIERS
PRV : 100 - 900 Volts Io : 1.5 Ampere.